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Mitsubishi

CM1200HC-90R Datasheet Preview

CM1200HC-90R Datasheet

HVIGBT Modules

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< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HC-90R
I 1200AC ································································
V 4500VCES ··························································
1-element in a pack
Insulated type
LPT-IGBT / Soft Recovery Diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
November 2012 HVM-1057-E
1




Mitsubishi

CM1200HC-90R Datasheet Preview

CM1200HC-90R Datasheet

HVIGBT Modules

No Preview Available !

< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Item
VCES
Collector-emitter voltage
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Ve
Tj
Tjop
Tstg
tpsc
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
VGE = 0V, Tj = 40…+125°C
VGE = 0V, Tj = 50°C
VCE = 0V, Tj = 25°C
DC, Tc = 85°C
Pulse (Note 1)
DC
Pulse (Note 1)
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD 10 pC
VCC = 3200V, VCE VCES, VGE =15V, Tj =125°C
Ratings
4500
4400
±20
1200
2400
1200
2400
12500
6000
3500
50 ~ +150
50 ~ +125
55 ~ +125
10
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
s
ELECTRICAL CHARACTERISTICS
Symbol
ICES
VGE(th)
IGES
Cies
Coes
Cres
QG
VCEsat
td(on)
tr
Eon(10%)
Eon
td(off)
tf
Eoff(10%)
Eoff
Item
Conditions
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 5)
Turn-on switching energy
(Note 6)
Turn-off delay time
Turn-off fall time
Turn-off switching energy (Note 5)
Turn-off switching energy (Note 6)
VCE = VCES, VGE = 0V
VCE = 10 V, IC = 120 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
Tj = 25°C
Tj = 125°C
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
VCC = 2800V, IC = 1200A, VGE = ±15V
IC = 1200 A (Note 4)
VGE = 15 V
VCC = 2800 V
IC = 1200 A
VGE = ±15 V
RG(on) = 2.7
Ls = 150 nH
Inductive load
VCC = 2800 V
IC = 1200 A
VGE = ±15 V
RG(off) = 10
Ls = 150 nH
Inductive load
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Min
5.8
0.5
Limits
Typ
16.0
6.3
175.0
11.0
5.0
13.5
3.50
4.40
1.00
0.95
0.28
0.30
4.30
5.10
4.60
5.50
3.60
3.80
0.35
0.45
2.90
3.85
3.20
4.30
Max
16.0
6.8
0.5
5.10
1.50
0.50
5.00
1.00
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J
J/P
µs
µs
J
J
December 2012 HVM-1057-E
2


Part Number CM1200HC-90R
Description HVIGBT Modules
Maker Mitsubishi
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CM1200HC-90R Datasheet PDF






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