3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Top
Tstg
Viso
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 85°C
Pulse
Conditions
Pulse
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1150V, VCES ≤ 1700V, VGE = 15V
Tj = 125°C
(Note 1)
(Note 1)
Ratings
1700
±20
1200
2400
1200
2400
10400
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
10
Unit
V
V
A
A
A
A
W
°C
°C
°C
V
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
Qg
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VEC (Note 2) Emitter-collector voltage
td(on)
tr
Eon
td(off)
tf
Eoff
trr (Note 2)
Qrr (Note 2)
Erec (Note 2)
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
VCE = VCES, VGE = 0V, Tj = 25°C
IC = 120mA, VCE = 10V, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 125°C
(Note 4)
(Note 4)
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C
IE = 1200A, VGE = 0V, Tj = 25°C
(Note 4)
IE = 1200A, VGE = 0V, Tj = 125°C
(Note 4)
VCC = 850V, IC = 1200A, VGE = ±15V
RG(on) = 2Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 850V, IC = 1200A, VGE = ±15V
RG(off) = 2Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 850V, IC = 1200A, VGE = ±15V
RG(on) = 2Ω, Tj = 125°C, Ls = 100nH
Inductive load
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
5.5
—
2.50
2.95
117
16.7
6.3
11.0
2.25
1.75
—
—
400
—
—
440
—
350
180
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Max
20
Unit
mA
6.5
0.5
3.25
—
—
—
—
—
2.90
—
1.60
1.30
—
2.70
0.80
—
2.70
—
—
V
µA
V
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
µC
mJ/pulse
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
