FDS6680A mosfet equivalent, n-channel mosfet.
* 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V
* Ultra-low gate charge
* High performance trench technology for extremely low RDS(.
where low in-line power loss and fast switching are required.
Features
* 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V.
This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited .
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