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FDS6680A Datasheet, ON Semiconductor

FDS6680A mosfet equivalent, n-channel mosfet.

FDS6680A Avg. rating / M : 1.0 rating-11

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FDS6680A Datasheet

Features and benefits


* 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V
* Ultra-low gate charge
* High performance trench technology for extremely low RDS(.

Application

where low in-line power loss and fast switching are required. Features
* 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V.

Description

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited .

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TAGS

FDS6680A
N-Channel
MOSFET
ON Semiconductor

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