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FDS6680S - 30V N-Channel Power MOSFET

General Description

The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Key Features

  • 11.5 A, 30 V. RDS(ON) = 0.011 Ω @ VGS = 10 V RDS(ON) = 0.016 Ω @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode Low gate charge (17nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6680S February 2000 PRELIMINARY FDS6680S 30V N-Channel PowerTrench SyncFET™ General Description The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Features • 11.5 A, 30 V. RDS(ON) = 0.011 Ω @ VGS = 10 V RDS(ON) = 0.016 Ω @ VGS = 4.