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FDS6680 - N-Channel MOSFET

General Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

The MOSFET

Overview

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM.

Key Features

  • faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 11.5 A, 30 V. RDS(ON) = 0.010 Ω @ VGS = 10 V RDS(ON) = 0.015 Ω @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching. Low gate charge (typical Qg = 19 nC). SOT-23 SuperSOTTM-6 SuperSOTTM-.