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FDS6680A Datasheet N-Channel MOSFET

Manufacturer: onsemi

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Datasheet Details

Part number FDS6680A
Manufacturer onsemi
File Size 255.83 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS6680A Datasheet

General Description

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Overview

FDS6680A FDS6680A Single N-Channel, Logic Level, PowerTrench® MOSFET.

Key Features

  • 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V.
  • Ultra-low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1a).

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