FDS6612A
Description
This N-Channel Logic Level MOSFET is produced using
Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
- 8.4 A, 30 V.
RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
DDDD DD DD
SO-8
Pin 1 SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Single Pulse Avalanche Energy
(Note 3)
TJ, TSTG
Operating and Storage Junction...
