FDS6675
Description
Features
This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook puter applications: load switching and power management, battery charging circuits, and DC/DC conversion.
-11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V.
Low gate charge (30n C typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
SOT-23
Super SOTTM-6
Super SOTTM-8
SO-8
SOT-223
SOIC-16
FD66S75
SO-8 pin 1
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
TA = 25o C unless otherwise noted
(Note 1a)
Power Dissipation for Single Operation (Note...
