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FDS6682 - 30V N-Channel MOSFET

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General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Overview

FDS6682 February 2004 FDS6682 30V N-Channel PowerTrench® MOSFET.

Key Features

  • 14 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 9.0 mΩ @ VGS = 4.5 V.
  • Low gate charge (22 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1a) PD Power Dissipation for Sing.

More Datasheets from Fairchild (now onsemi)

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