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FDS6688 - 30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Overview

FDS6688 December 2001 FDS6688 30V N-Channel PowerTrench MOSFET General.

Key Features

  • 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V.
  • Ultra-low gate charge (40 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.