Datasheet4U Logo Datasheet4U.com

FDS6680AS - 30V N-Channel MOSFET

Key Features

  • The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky di.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6680A N-Channel MOSFET ON Semiconductor
FDS6681Z 30V P-Channel MOSFET ON Semiconductor
FDS6685 P-Channel MOSFET On Semiconductor
FDS6612A N-Channel MOSFET ON Semiconductor
FDS6673BZ P-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDS6680A N-Channel MOSFET
FDS6680 N-Channel MOSFET
FDS6680S 30V N-Channel Power MOSFET
FDS6681Z MOSFET
FDS6682 30V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS6680AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6680AS tm 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Applications • 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V RDS(ON) max= 12.5 mΩ @ VGS = 4.