FDS6680A
FDS6680A is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Features
12.5 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.013 Ω @ VGS = 4.5 V.
Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
SOT-23
Super SOTTM-6
Super SOTTM-8
SO-8
SOT-223
SOIC-16
4 3 2 1
S FD 0A 8 66 pin 1
6 7
SO-8
Absolute Maximum Ratings
Symbol Parameter
TA = 25o C unless other wise noted
FDS6680A Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
30 ±20 12.5 50 2.5 1.2 1 -55 to 150
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDS6680A Rev.D1
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain...
