14 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 9.0 mΩ @ VGS = 4.5 V.
Low gate charge (22 nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability
D D D D
SO-8
G SS S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current.