FDS6682 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Applications - DC/DC converter Features - 14 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 9.0 mΩ @ VGS = 4.5 V - Low gate charge (22 n C typical) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability SO-8 G SS S Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 13’’ 5 6 7...