FDS6685 Datasheet | Fairchild Semiconductor

March 1999 PRELIMINARY P-Channel Logic Level Power Trench TM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V Extended VGSS range (±25V) for battery applications. Low gate charge (19n C typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. - - - - - Applications - - - Battery protection Load switch Motor drives 5 6 7 4 3 2...