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FDS6685 - P-Channel Logic Level PowerTrenchTM MOSFET

Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V Extended VGSS range (±25V) for battery.

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FDS6685 March 1999 PRELIMINARY FDS6685 P-Channel Logic Level PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V Extended VGSS range (±25V) for battery applications. Low gate charge (19nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
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