FDS6681Z datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

*
  –20 A,
  –30 V. RDS(ON) = 4.6 mΩ @ VGS =
  –10 V RDS(ON) = 6.5 mΩ @ VGS =
  –4.5 V
* Extended VGSS ran.

Application

common in Notebook Computers and Portable Battery Packs. Features
*
–20 A,
–30 V. R.

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications com.

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