FDS6681Z Datasheet | Fairchild Semiconductor

Aug 2015 30 Volt P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Features - - 20 A, - 30 V. RDS(ON) = 4.6 mΩ @ VGS = - 10 V RDS(ON) = 6.5 mΩ @ VGS = - 4.5 V - Extended VGSS range (- 25V) for battery applications - HBM ESD protection level of 8kV typical (note 3) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability -...