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FDS6681Z - MOSFET

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

Features

  • 20 A,.
  • 30 V. RDS(ON) = 4.6 mΩ @ VGS =.
  • 10 V RDS(ON) = 6.5 mΩ @ VGS =.
  • 4.5 V.
  • Extended VGSS range (.
  • 25V) for battery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6681Z Aug 2015 FDS6681Z 30 Volt P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • –20 A, –30 V. RDS(ON) = 4.6 mΩ @ VGS = –10 V RDS(ON) = 6.5 mΩ @ VGS = –4.
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