FDC638P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* −4.5 A, −20 V
* RDS(on) = 48 mW @ VGS = −4.5 V
* RDS(on) = 65 mW @ VGS = −2.5 V
* Low Gate Charge (10 nC Typical)
* High Performance Trench Technolo.

Application

load switching and power management, battery charging circuits, and DC/DC conversion. Features
* −4.5 A, −20 V
.

Description

This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are.

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