FDC6304P
Description
These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology.
Key Features
- 25 V, -0.46 A continuous, -1.0 A Peak
- RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-Source Zener for ESD ruggedness
- >6kV Human Body Model
