FDC6304P - Digital FET/ Dual P-Channel

Fairchild (now onsemi)

Datasheet Details

These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance at low gate drive conditions.

This device is designed especially for application in battery power applications such as notebook computers and cellular phones.

July 1997 FDC6304P Digital FET, Dual P-Channel General.

-25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .304 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC unless other.

Brand Logo	Part Number	Description	Manufacturer
	FDC6304P	Dual P-Channel MOSFET	ON Semiconductor

Part Number	Description
FDC6301N	Dual N-Channel / Digital FET
FDC6302P	Digital FET/ Dual P-Channel
FDC6303N	Dual N-Channel Digital FET
FDC6305N	Dual N-Channel MOSFET
FDC6306P	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDC6308P	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDC6310P	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDC6312P	Dual P-Channel MOSFET
FDC6318P	Dual P-Channel 1.8V PowerTrench Specified MOSFET
FDC6320C	Dual N & P Channel / Digital FET