FDC6318P Overview
Description
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 2.5 A, –12 V. RDS(ON) = 90 mΩ @ VGS = –4.5 V RDS(ON) = 125 mΩ @ VGS = –2.5 V RDS(ON) = 200 mΩ @ VGS = –1.8 V
- High performance trench technology for extremely low RDS(ON)
- SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
