FDC6318P Datasheet | Fairchild Semiconductor

Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Features - - 2.5 A, - 12 V. RDS(ON) = 90 mΩ @ VGS = - 4.5 V RDS(ON) = 125 mΩ @ VGS = - 2.5 V RDS(ON) = 200 mΩ @ VGS = - 1.8 V - High performance trench technology for extremely low RDS(ON) - Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) Applications - Power management - Load switch S1 D1 D2 4 5 G2 3 2 1 Super SOT -6 G1 S2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings - 12 ±8 (Note 1a) Units - 2.5 - 7 0.96 0.9 0.7 - 55 to +150 Power Dissipation for Single...