FDC6310P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6310P
Manufacturer	Fairchild Semiconductor
File Size	69.39 KB
Description	Dual P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDC6310P Datasheet
Additional preview pages of the FDC6310P datasheet.

Product details

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

2.2 A,.
20 V. RDS(ON) = 125 mΩ @ V GS =.
4.5 V RDS(ON) = 190 mΩ @ V GS =.
2.5 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick).

📁 Similar Datasheet

FDC6310P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6312P - Dual P-Channel 20V MOSFET (VBsemi)
FDC6301N - Dual N-Channel Digital FET (ON Semiconductor)
FDC6302P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6303N - Dual N-Channel Digital FET (onsemi)
FDC6304P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6305N - Dual N-Channel MOSFET (ON Semiconductor)
FDC6306P - Dual P-Channel 20V MOSFET (VBsemi)

Other Datasheets by Fairchild Semiconductor

FDC6312P - Dual P-Channel MOSFET
FDC6318P - Dual P-Channel 1.8V PowerTrench Specified MOSFET
FDC6301N - Dual N-Channel / Digital FET
FDC6302P - Digital FET/ Dual P-Channel
FDC6303N - Dual N-Channel Digital FET
FDC6304P - Digital FET/ Dual P-Channel

Published: Mar 30, 2005 |