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FDC6308P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

Features

  • • -1.7 A, -18 V. RDS(ON) = 0.18 Ω @ VGS = -4.5 V RDS(ON) = 0.30 Ω @ VGS = -2.5 V • • • • • Extended VGSS range (±12V) for battery.

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Datasheet Details

Part number FDC6308P
Manufacturer Fairchild Semiconductor
File Size 325.14 KB
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet download datasheet FDC6308P Datasheet
Additional preview pages of the FDC6308P datasheet.

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Full PDF Text Transcription

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FDC6308P July 1999 FDC6308P Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • -1.7 A, -18 V. RDS(ON) = 0.18 Ω @ VGS = -4.5 V RDS(ON) = 0.30 Ω @ VGS = -2.5 V • • • • • Extended VGSS range (±12V) for battery applications. Low gate charge (3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).
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