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FDC638APZ - N-Channel MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power app

Key Features

  • Max rDS(on) = 43mΩ at VGS =.
  • 4.5V, ID =.
  • 4.5A.
  • Max rDS(on) = 68mΩ at VGS =.
  • 2.5V, ID =.
  • 3.8A.
  • Low gate charge (8nC typical).
  • High performance trench technology for extremely low rDS(on).
  • SuperSOTTM.
  • 6 package:small footprint (72% smaller than standard SO.
  • 8) low profile (1mm thick).
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET –20V, –4.5A, 43mΩ Features „ Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A „ Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A „ Low gate charge (8nC typical). „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM –6 package:small footprint (72% smaller than standard SO–8) low profile (1mm thick). „ RoHS Compliant General Description This P-Channel 2.