PBSS5240X datasheet, transistor equivalent, NXP

Features and benefits

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency due to less heat generation 1.3 Applicatio.

Application

* DC-to-DC conversion
* Supply line switching
* Battery charger
* LCD backlighting
* Driver in low s.

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits
* Low collector-emitter saturation voltage VCE.

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