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NXP Semiconductors Electronic Components Datasheet

PBSS5240X Datasheet

transistor

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PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
19 October 2012
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:
PBSS4240X.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency due to less heat generation
1.3 Applications
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
ICRM
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
repetitive peak
collector current
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
tp ≤ 20 ms; δ ≤ 0.33 ; pulsed
Min Typ Max Unit
- - -40 V
- - -2 A
- - -3 A
- - 310 mΩ
- - -2.5 A
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NXP Semiconductors Electronic Components Datasheet

PBSS5240X Datasheet

transistor

No Preview Available !

NXP Semiconductors
PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 C collector
3 B base
Simplified outline
321
SOT89
Graphic symbol
C
B
E
sym132
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5240X
SOT89
Description
Version
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
4. Marking
Table 4. Marking codes
Type number
PBSS5240X
Marking code
S48
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICRM
repetitive peak collector current δ ≤ 0.33 ; tp ≤ 20 ms; pulsed
ICM peak collector current
IB base current
IBM peak base current
Ptot total power dissipation
PBSS5240X
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 October 2012
Min Max Unit
- -40 V
- -40 V
- -5 V
- -2 A
- -2.5 A
- -3 A
- -300 mA
- -1 A
[1] -
0.5 W
[2] -
0.95 W
© NXP B.V. 2012. All rights reserved
2 / 12


Part Number PBSS5240X
Description transistor
Maker NXP
PDF Download

PBSS5240X Datasheet PDF






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