Download PBSS5240T Datasheet PDF
NXP Semiconductors
PBSS5240T
FEATURES - Low collector-emitter saturation voltage - High current capability - Improved device reliability due to reduced heat generation - Replacement for SOT89/SOT223 standard packaged transistor. APPLICATIONS - Supply line switching circuits - Battery management applications - DC/DC converter applications - Strobe flash units - Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN plement: PBSS4240T. MARKING TYPE NUMBER PBSS5240T Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5240T - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) ZF- Top view handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. - 40 - 2 - 3 <220 UNIT...