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BUK9120-48TC - PowerMOS transistor Voltage clamped logic level FET

Description

Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV and active drain voltage clamping. Temperature sensitive diodes are incorporated for monitoring chip temperature. The device is intended for use in automotive and general purpose switching.

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Full PDF Text Transcription (Reference)

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Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV and active drain voltage clamping. Temperature sensitive diodes are incorporated for monitoring chip temperature. The device is intended for use in automotive and general purpose switching applications.
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