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BUK9212-55B - TrenchMOS logic level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Full PDF Text Transcription for BUK9212-55B (Reference)

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www.DataSheet4U.com BUK9212-55B TrenchMOS™ logic level FET M3D300 Rev. 02 — 12 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode fiel...

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data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 173 mJ s ID ≤ 75 A s RDSon = 10.2 mΩ (typ) s Ptot ≤ 167 W. 2.

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