BUK9214-30A
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Q101 pliant
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID
Quick reference data Parameter drain-source voltage drain current
Ptot total power dissipation Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics QGD gate-drain charge
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche energy
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3...
