BUK9225-55A
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS
Ptot
Quick reference data
Parameter
Conditions drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C drain current
VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 total power dissipation
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 55 V
- - 43 A
- - 94 W
NXP Semiconductors
N-channel Trench MOS logic level FET
Table 1. Quick reference data...
