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BUK9107-55ATE - N-channel TrenchPLUS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing.

Key Features

  • Allows responsive temperature monitoring due to integrated temperature sensor.
  • Q101 compliant.
  • Electrostatically robust due to integrated protection diodes.
  • Low conduction losses due to low on-state resistance 1.3.

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Full PDF Text Transcription for BUK9107-55ATE (Reference)

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BUK9107-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancem...

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Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Allows responsive temperature monitoring due to integrated temperature sensor „ Q101 compliant „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance 1

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