BUK9107-55ATE
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. The devices include Trench PLUS diodes for Electro Static Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Allows responsive temperature monitoring due to integrated temperature sensor
- Q101 pliant
- Electrostatically robust due to integrated protection diodes
- Low conduction losses due to low on-state resistance
1.3 Applications
- 12 V and 24 V high power motor drives
- Automotive and general purpose power switching
- Electrical Power Assisted Steering (EPAS)
- Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics
Tj ≥ 25 °C; Tj ≤...
