BUK9006-55A
Description
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) Trench MOS™ technology. Product availability: BUK9006-55A distributed as individual die on reel.
1.2 Features s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection.
1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching.
1.4 Quick reference data s EDS(AL)S ≤ 1.1 J s V(BR)DSS ≤ 55 V s Die size = 4.30 × 4.30 mm (typ) s RDSon(die) = 5 mΩ (typ) s VGS(th) = 1.5 V (typ) s Die thickness = 240 µm (typ).
2. Pinning information
Table 1: Pin 1 2 Pinning
- Bare die simplified outline and symbol Description gate d
Simplified outline
Symbol source drain; connected to underside of die
1 2 g s
MBB076
03nn81
Philips Semiconductors
..
Trench MOS™ logic level FET
3. Limiting values
Table 2:...
