BUK9219-55A
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™1 technology, featuring very low on-state resistance. Product availability: BUK9219-55A in SOT428 (D-PAK).
2. Features s s s s Trench MOS™ technology Q101 pliant 175 °C rated Logic level patible.
3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads. x Motors, lamps and solenoids. c c
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb
Simplified outline
Symbol drain (d) source (s) drain (d)
2 1 Top view 3
MBK091 d g s
MBB076
SOT428 (D-PAK)
1.
Trench MOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
Trench MOS™ logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 5 V; ID = 25 A VGS = 4.5 V; ID = 25 A Typ
- -
- - 15
- Max 55 55 114 175 19 20...
