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NCE55H12 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number NCE55H12
Manufacturer NCE Power Semiconductor
File Size 393.19 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE55H12 Datasheet

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Full PDF Text Transcription

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Pb Free Product http://www.ncepower.com NCE55H12 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.
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