MSAFZ33N20A datasheet, mosfet equivalent, Microsemi Corporation

Features and benefits

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* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped.

Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 33 20 132 33 16 790 TBD 300 -55 to +150 -55 to +150 33 132 0.4 UNIT .

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