MSAFX11P50A datasheet, mosfet equivalent, Microsemi Corporation

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Features and benefits

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* High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure .

Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. 500 500 +/-20 +/-30 11 8 44 11 30 tbd 5.0 300 -55 to +150 -55 to +150 11 44 0.25 U.

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