MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

HYG012N03LR1P/B N-Channel Enhancement Mode MOSFET Feature  30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V  100% Ava

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

HY3008P/M/B/ MF /PL/PM N-Channel Enhancement Mode MOSFET Feature z 80V/100A RDS(ON)= 6.6mΩ(typ.)@VGS = 10V z 100% Avalanche Tested z Reliable and Ru

Free Datasheet http://www.datasheet-pdf.com/ FHP740 FHP740 N MOS 。 AC-DC ， DC-DC， HPMW。 ★ ★ ★ 7A,400V,RDS(on)(）0.51Ω 、 （TC =25℃） — TC=2

http://www.ncepower.com Pb Free Product BSS138K NCE N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @

http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology

EMB03N03HR Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30V RDSON (MAX

http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol

EMB12N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS RDSON (MAX.)@VGS=

HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

HYG012N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature  30V/180A RDS(ON)= 0.9 mΩ(typ.) @VGS = 10V RDS(ON)=1.3 mΩ(typ.) @VGS = 4.5V  100%

+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), This device

WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

PAN3080L 30V N-channel enhancement mode MOSFET General Description The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench