MSAFR12N50A datasheet, mosfet equivalent, Microsemi Corporation

Features and benefits

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* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped.

Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 500 500 +/-20 +/-30 12 8 48 12 tbd 8 3.5 300 -55 to +150 -55 to +150 12 48 0.4 UNIT Volt.

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