MSAFA1N100D Datasheet, Microsemi Corporation

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* MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage.

DESCRIPTION:
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* N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontsid.

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* N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti
  – Ni (1 um)
  .