MSAFX24N50A mosfet equivalent, n-channel enhancement mode power mosfet.
*
*
*
*
*
*
*
Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetical.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC
DRAIN
MAX. 500 500 +/-20 +/-30 24 20 96 24 30 tbd 5.0 300 -55 to +150 -55 to +150 24 96 0.25
.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 68.20KB)