MSAFX50N20A datasheet, mosfet equivalent, Microsemi Corporation

Features and benefits

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* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetical.

Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 50 40 200 50 30 tbd 5.0 300 -55 to +150 -55 to +150 50 200 0.25 UNIT.

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