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GTRB424908FC Datasheet, MACOM

GTRB424908FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.

GTRB424908FC Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 833.42KB)

GTRB424908FC Datasheet
GTRB424908FC
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 833.42KB)

GTRB424908FC Datasheet

Features and benefits

high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA D.

Application

It features high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/.

Description

The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. .

Image gallery

GTRB424908FC Page 1 GTRB424908FC Page 2 GTRB424908FC Page 3

TAGS

GTRB424908FC
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
MACOM

Manufacturer


MACOM

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