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GTRB204402FC Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRB204402FC Description

GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 * 2020 MHz .
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifie.

GTRB204402FC Features

* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 35 30 25

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Datasheet Details

Part number
GTRB204402FC
Manufacturer
MACOM
File Size
904.05 KB
Datasheet
GTRB204402FC-MACOM.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT MACOM
MACOM GTRB204402FC-like datasheet