GTRB204402FC Description
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
GTRB204402FC Key Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 µs pulse width, 10% duty cycle, bined outputs
- Output power at P3dB = 350 W
- Efficiency at P3dB = 65%
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS pliant
- 27.2 -27.1 -26.6
- 27.4 -27.2 -26.6
- 3.1 6.3 -5 -10