Description
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Features
- high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V,
ƒ = 2020 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
40 35 30 25 20 15 10
5 0
25
80
Efficiency
60
40
20 Gain
0
-20
-40
PAR @ 0.01% CCDF
-60
GTRB204402FC_g1
-80
30 35 40 45 50 55
Average Output Power (dBm)
Features.
- GaN on SiC HEMT technology.
GTRB204402FC Datasheet
