GTRB204402FC
Description
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Key Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 µs pulse width, 10% duty cycle, combined outputs - Output power at P3dB = 350 W - Efficiency at P3dB = 65%
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant Typical RF Characteristics Single-carrier WCDMA Specifications (tested in the Doherty evaluation board for 1930 to 2020 MHz) VDD = 48 V, IDQ = 150 mA, VGS(PEAK) = -5.5 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF 1930 MHz 1975 MHz 2020 MHz POUT (dBM)
- 5 Gain (dB)
- 9 16 16.1 Efficiency (%)
- 7 59.7 61.5 ACPR+ (dBc) -27.2 -27.1 -26.6 ACPR- (dBc) -27.4 -27.2 -26.6 OPAR (dB)
- 6 8.7 8.1 Note: All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device-observe handling precautions! 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Rev. 02.1, 2022-09-18
