Datasheet4U Logo Datasheet4U.com

GTRB204402FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Description

The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.

Features

  • high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 35 30 25 20 15 10 5 0 25 80 Efficiency 60 40 20 Gain 0 -20 -40 PAR @ 0.01% CCDF -60 GTRB204402FC_g1 -80 30 35 40 45 50 55 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GTR210 Gastransmitter ADOS
GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT Wolfspeed
GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT Wolfspeed
GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT Wolfspeed
GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT Wolfspeed

Other Datasheets by MACOM Technology Solutions

Part Number Description
GTRB206002FC Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB224402FC Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB264318FC Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB267008FC Thermally-Enhanced High Power RF GaN on SiC HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 35 30 25 20 15 10 5 0 25 80 Efficiency 60 40 20 Gain 0 -20 -40 PAR @ 0.
Published: |