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GTRB267008FC Datasheet, MACOM

GTRB267008FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.

GTRB267008FC Avg. rating / M : 1.0 rating-11

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GTRB267008FC Datasheet

Features and benefits

high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Dr.

Application

It features high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/A.

Description

The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. Package Typ.

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TAGS

GTRB267008FC
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
GTRB264318FC
GTRB266908FC
GTRB204402FC
MACOM

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