GTRB267008FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
high efficiency, and a thermally-enhanced package with earless flange.
Package Type: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Dr.
It features high efficiency, and a thermally-enhanced package with earless flange.
Package Type: H-37248KC-6/2
Peak/A.
The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
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