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GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Key Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA262802FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) =.
  • 5.0 V, ƒ = 2635 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 28 70 24 Efficiency 50 20 30 16 Gain 10 12 -10 8 -30 PAR @ 0.01% CCDF 4 -50 0 25 gtra262802fc_g1 -70 30 35 40 45 50 55 Average Output Power (dBm) Fea.

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Datasheet Details

Part number GTRA262802FC
Manufacturer Wolfspeed
File Size 508.67 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTRA262802FC Datasheet

Full PDF Text Transcription for GTRA262802FC (Reference)

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GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobi...

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on The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA262802FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) = –5.0 V, ƒ = 2635 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 28 70 24 Efficiency 50 20 30 16 Gain 10 12 -10 8 -30 PAR @ 0.

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