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GTRA362002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.

Key Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 110 mA, VGS(PEAK) = -5.5 V, ƒ = 3600 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 Gain 16 20 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 32 -60 gtra362002fc_g1 37 42 47 52 Average Output Power (dBm) Features.
  • GaN on SiC HEMT.

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Datasheet Details

Part number GTRA362002FC
Manufacturer Wolfspeed
File Size 239.54 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTRA362002FC Datasheet

Full PDF Text Transcription for GTRA362002FC (Reference)

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GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobi...

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on The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 110 mA, VGS(PEAK) = -5.5 V, ƒ = 3600 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 Gain 16 20 12 0 8 -20 PAR @ 0.

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