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GTRA374902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Key Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 250 mA, VGS(PEAK) = -5.8 V, ƒ = 3700 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 35 gtra374902fc_g1 -60 37.5 40 42.5 45 47.5 50 Average Output Power (dBm) Features.
  • GaN on SiC HEMT.

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Datasheet Details

Part number GTRA374902FC
Manufacturer Wolfspeed
File Size 453.34 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTRA374902FC Datasheet

Full PDF Text Transcription for GTRA374902FC (Reference)

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GTRA374902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Description The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobi...

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on The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 250 mA, VGS(PEAK) = -5.8 V, ƒ = 3700 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 35 gtra374902fc_g1 -60 37.5 40 42.5 45 47.

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