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GTRA263902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications.

Key Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA263902FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Efficiency 60 24 40 20 Gain 20 16 0 12 -20 8 -40 4 0 25 PAR @ 0.01% CCDF -60 gtra263902fc_g1 -80 30 35 40 45 50 55 Average Output Power (dBm) Feat.

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Datasheet Details

Part number GTRA263902FC
Manufacturer Wolfspeed
File Size 524.97 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTRA263902FC Datasheet

Full PDF Text Transcription for GTRA263902FC (Reference)

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GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Description The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobi...

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on The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA263902FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Efficiency 60 24 40 20 Gain 20 16 0 12 -20 8 -40 4 0 25 PAR @ 0.

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