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GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers.

t for use in communications infrastructure applications from 3,400 MHz to c 3,800 MHz.

Key Features

  • GaN on SiC HEMT technology.
  • Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ.
  • Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain efficiency = 62% @ 50 W.
  • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001).
  • Pb-free and RoHS compliant.
  • Low thermal resistance isc RF Characteristics d Typical RF Characteristics (tested in Wol.

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Datasheet Details

Part number GTRA360502M
Manufacturer Wolfspeed
File Size 767.59 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTRA360502M Datasheet

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GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power transistor for use in asy...

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The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers. The device has been designed t for use in communications infrastructure applications from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, average output power of 8 watts. GTRA360502M Package PG-DFN-6.5x7-1 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) du Single-carrier WCDMA Drive-up VDD = 48V, IDQ = 25 mA, VGS(PEAK) = –4.9 V, o ¦ = 3600 MHz r 3GPP WCDMA signal 10 dB PAR, 3.84 MHz bandwidth p 21 60 Gain 18 50 d 15 40 e 12 Efficiency 30 u 9 20 in 6 PAR @ 0.

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