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GTRB206002FC Datasheet, MACOM

GTRB206002FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.

GTRB206002FC Avg. rating / M : 1.0 rating-11

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GTRB206002FC Datasheet

Features and benefits

high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WC.

Application

It features high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 .

Description

The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. .

Image gallery

GTRB206002FC Page 1 GTRB206002FC Page 2 GTRB206002FC Page 3

TAGS

GTRB206002FC
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
GTRB204402FC
GTRB224402FC
GTRB264318FC
MACOM

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