GTRB206002FC
Description
The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Key Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 µs pulse width, 10% duty cycle, combined outputs - Output power at P3dB = 500 W - Efficiency at P3dB = 63%
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant Typical RF Characteristics Single-carrier WCDMA Specifications (tested in the Doherty evaluation board for 1930 - 2020 MHz) VDD = 48 V, IDQ = 600 mA, VGS(peak) = VGS at IDQ(peak) = 400 mA - 2.7 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF POUT (dBM) Gain Efficiency ACPR + ACPR - (dB) (%) (dBc) (dBc) OPAR (dB) 1930
- 3 -26.7 -26.8
- 9 1960
- 6 -27.6 -27.6
- 2 1990
- 9 -29.5 -29.3
- 1 2020
