GTRB206002FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
high efficiency, and a thermally-enhanced package with earless flange.
GTRB206002FC/1 Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WC.
It features high efficiency, and a thermally-enhanced package with earless flange.
GTRB206002FC/1 Package H-37248C-4
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The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
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