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GTRA184602FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRA184602FC Description

GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 * 1880 MHz .
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.

GTRA184602FC Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 150 mA, VGS(PEAK) =
* 5.5 V, ƒ = 1875 MHz, 3GPP WCDMA signal, 10 dB PAR 3.84

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Datasheet Details

Part number
GTRA184602FC
Manufacturer
Wolfspeed
File Size
687.51 KB
Datasheet
GTRA184602FC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed
Wolfspeed GTRA184602FC-like datasheet