GTRB264318FC
Description
The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
Key Features
- GaN on SiC HEMT technology
- Broadband Internal matching
- Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
- 3.7 Typ. - –3.1 Max. 50 -2.6 Unit Conditions V VDS =48 V, ID = 150 mA
