GTRB264318FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Product Overview

MACOM

Datasheet Details

Part number	GTRB264318FC
Manufacturer	MACOM
File Size	520.53 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTRB264318FC Datasheet
Additional preview pages of the GTRB264318FC datasheet.

Product details

Description

The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VCC = 48 V, IDQ = 150 mA, VGS(PEAK) =.
5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 20 60 Gain 16 45 12 8 4 30 30 Efficiency 15 PAR @ 0.01% CCDF 35 40 45 gt r b264318f c- par 1 0 50 Average Output Power (dBm) Features.
GaN on SiC HEMT technology.

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Published: May 13, 2024 |