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GTRB264318FC Datasheet, MACOM

GTRB264318FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.

GTRB264318FC Avg. rating / M : 1.0 rating-11

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GTRB264318FC Datasheet

Features and benefits

internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Sin.

Application

It features internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H.

Description

The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless f.

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TAGS

GTRB264318FC
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
MACOM

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