GTRB264318FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
internal matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Sin.
It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H.
The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless f.
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