CGH31240F hemt equivalent, gan hemt.
* 2.7 - 3.1 GHz Operation
* 12 dB Power Gain
* 60% Power Added Efficiency
* < 0.2 dB Pulsed Amplitude Droop
Large Signal Models Available for ADS and MWO.
The transistor is supplied in a ceramic/metal flange package.
Package Types: 440201 PN: CGH31240F
Typical Performance.
The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applicatio.
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